1. Transition to Wide Bandgap (GaN & SiC) Architectures
With high-frequency Gallium Nitride (GaN) and Silicon Carbide (SiC) power stages driving higher power densities, switching transients have reached higher dV/dt slew rates. Overvoltage Protectors must now incorporate active high-frequency noise filters to prevent false tripping while maintaining sub-microsecond response during real overvoltage events.
